 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SUD50P06-15L New Product Vishay Siliconix P-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) - 60 FEATURES ID (A) - 50 d - 50 rDS(on) (W) 0.015 @ VGS = - 10 V 0.020 @ VGS = - 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D Automtoive 12-V Boardnet S TO-252 G Drain Connected to Tab G D S Top View D Ordering Information: SUD50P06-15L P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit - 60 "20 - 50d - 39 - 80 - 50 125 136c 3b, c - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec Junction-to-Ambientb J ti t A bi t Junction-to-Case Notes: a. Duty cycle v 1%. b. When mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Package limited. Document Number: 72250 S-31673--Rev. B 11-Aug-03 www.vishay.com Steady State RthJA RthJC Symbol Typical 15 40 0.82 Maximum 18 50 1.1 Unit _C/W C/W 1 SUD50P06-15L Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = - 250 mA VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "20 V VDS = - 48 V, VGS = 0 V Zero Gate Voltage Drain Current g IDSS VDS = - 48 V, VGS = 0 V, TJ = 125_C VDS = - 48 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 17 A Drain-Source On-State Drain Source On State Resistancea VGS = - 10 V, ID = - 50 A, TJ = 125_C rDS( ) DS(on) VGS = - 10 V, ID = - 50 A, TJ = 175_C VGS = - 4.5 V, ID = - 14 A Forward Transconductancea gfs VDS = - 15 V, ID = - 17 A 61 - 50 0.012 0.015 0.025 0.030 0.020 S W - 60 -1 -3 "100 -1 - 50 - 150 A m mA nA V Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = - 30 V, RL = 0.6 W ID ] - 50 A, VGEN = - 10 V, RG = 6 W VDS = - 30 V, VGS = - 10 V, ID = - 50 A , , VGS = 0 V, VDS = - 25 V, f = 1 MHz 4950 480 405 110 19 28 15 70 175 175 23 105 260 260 ns 165 nC pF Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Is ISM VSD trr IF = - 50 A, VGS = 0 V IF = - 50 A, di/dt = 100 A/ms 1.0 45 - 50 A - 80 1.6 70 V ns Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72250 S-31673--Rev. B 11-Aug-03 SUD50P06-15L New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 80 70 60 I D - Drain Current (A) 50 3V 40 30 20 10 0 0 1 2 3 4 5 I D - Drain Current (A) VGS = 10 thru 4 V 80 70 60 50 40 30 20 10 0 0.0 TC = 125_C 25_C - 55_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Vishay Siliconix Transfer Characteristics VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 100 TC = - 55_C 80 g fs - Transconductance (S) 25_C r DS(on)- On-Resistance ( W ) 125_C 0.020 0.025 On-Resistance vs. Drain Current VGS = 4.5 V 0.015 VGS = 10 V 0.010 60 40 20 0.005 0 0 10 20 30 40 50 60 0.000 0 10 20 30 40 50 60 70 80 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Capacitance 8000 7000 V GS - Gate-to-Source Voltage (V) 8 6000 5000 4000 3000 2000 1000 0 0 Crss 10 20 30 40 50 60 Coss 10 Gate Charge VDS = 30 V ID = 50 A C - Capacitance (pF) Ciss 6 4 2 0 0 20 40 60 80 100 120 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 72250 S-31673--Rev. B 11-Aug-03 www.vishay.com 3 SUD50P06-15L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.0 1.8 r DS(on) - On-Resistance ( W ) (Normalized) 1.6 1.4 1.2 1.0 0.8 0.6 - 50 1 - 25 0 25 50 75 100 125 150 175 0.0 0.3 0.6 0.9 1.2 1.5 VGS = 10 V ID = 17 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage TJ = 150_C 10 TJ = 25_C TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 60 100.00 rDS(on) Limited 50 P(t) = 0.0001 I D - Drain Current (A) I D - Drain Current (A) 40 ID(on) Limited 10.00 Safe Operating Area IDM Limited 30 20 P(t) = 0.001 TC = 25_C Single Pulse BVDSS Limited 1.0 10.0 VDS - Drain-to-Source Voltage (V) 10 P(t) = 0.01 P(t) = 0.1 P(t) = 1 100.0 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 1.00 0.1 Normalized Thermal Transient Impedance, Junction-to-Case 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (sec) 10 -1 1 www.vishay.com 4 Document Number: 72250 S-31673--Rev. B 11-Aug-03 |
Price & Availability of SUD50P06-15L
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |